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Appliance for Monitoring of Etching Activation


Abstract

Etching processes the surfaces of substrate wafers very often, especially if they are to be reused in the semiconductor technology. In order to obtain a desired etch rate it is common to make use of following parameters: type, concentration and temperature of etchants as well as material of the substrate wafer. However, a continual monitoring of etch activation, especially in the case of wet etches takes place very slowly.


Background

Etching processes the surfaces of substrate wafers very often, especially if they are to be reused in the semiconductor technology. In order to obtain a desired etch rate it is common to make use of following parameters: type, concentration and temperature of etchants as well as material of the substrate wafer. However, a continual monitoring of etch activation, especially in the case of wet etches takes place very slowly.


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Solution

Prof. Dr. Seidel together with his employees of the Department of Micromechanics of Saarland University developed a novel appliance for monitoring of wet chemical etch ctivation. A desired final point of the etch activation (etch stop) can be determined by continual measurement during the wet chemical structure activation. It is not necessary to use pn-junction in order to obtain the etch stop nor to carry out interval measurements which require the removal of etch holder from the etch dissolution. The method is suitable for any plane-parallel substrates which are optically transparent in at least one partition of the spectrum. In particular, the following substrates are of great interest: Si, GaAs, SiC, GaN, Ge, silicon and other III-IV semiconductors.


Advantages

  • The optical component essential for the control of layer thickness is integrated into the modified etch holder
  • Possibility of automatic control over wet chemical etching
  • Suitability for mass production
  • Constant and continual control over the thickness of the substrate as well as the etchant
  • In the case of the variation in the reference etch rate, the etching process can be modified all the time during etch activation

Scope of application

  • Serial production of semiconductor wafers
  • Serial substrates processing like Si, GaAs, SiC, GaN, Ge, silicon and other III-IV semiconductors

Service

We are looking for production and marketing partners interested in the further development of the new technology as well as in the purchase of a single or an exclusive license.


Universität des Saarlandes Wissens- und Technologietransfer GmbH

Dr. Frank Döbrich
0681 302-3508
frank.doebrich@uni-saarland.de
www.wut-uni-saarland.de
Address
Universität des Saarlandes Wissens- und Technologietransfer GmbH Starterzentrum | Gebäude A1 1
66123 Saarbrücken



Patent situation

  • DE 102004045956 granted

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